| PART |
Description |
Maker |
| IGW20N60H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies A...
|
| IGW30N60H3 |
High speed IGBT IN Trench and Fieldstop technology
|
Infineon Technologies AG
|
| STGB20H60DF STGP20H60DF STGF20H60DF |
600 V, 20 A high speed trench gate field-stop IGBT
|
ST Microelectronics
STMicroelectronics
|
| STGW60H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
|
ST Microelectronics
|
| STGB30V60DF STGWT30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
|
ST Microelectronics
|
| APTGT300A120G |
Phase leg Fast Trench Field Stop IGBT Power Module 420 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| IKW20N60T IKP20N60T IKB20N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
IGBT in Trench and Fieldstop technology with soft/fast recovery anti-parallel EmCon HE diode
IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
| IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
Low V High speed IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
